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MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module>
PS21A79
TRANSFER-MOLD TYPE
INSULATED TYPE
PS21A79
MAIN FUNCTION AND RATINGS
3 phase inverter with N-side open emitter structure
600V / 50A (CSTBT)
APPLICATION
AC100 ~ 200Vrms class, motor control
INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS
● For P-side : Drive circuit, High voltage high-speed level shifting, Control supply under-voltage (UV) protection
● For N-side : Drive circuit, Control supply under-voltage protection (UV), Short circuit protection (SC),
● Fault signaling : Corresponding to SC fault (N-side IGBT), UV fault (N-side supply)
● Temperature monitoring : Analog output of LVIC temperature
● Input interface : 3, 5V line, Schmitt trigger receiver circuit (High Active)
● UL Approved : File No. E80276
MAXIMUM RATINGS (T j = 25°C, unless otherwise noted)
INVERTE R PART
Symbol
V CC
V CC(surge)
V CES
±I C
±I CP
P C
T j
Parameter
Supply voltage
Supply voltage (surge)
Collector-emitter voltage
Each IGBT collector current
Each IGBT collector current (peak)
Collector dissipation
Junction temperature
Condition
Applied between P-NU,NV,NW
Applied between P-NU,NV,NW
T C = 25°C
T C = 25°C, less than 1ms
T C = 25°C, per 1 chip
Ratings
450
500
600
50
100
142
-20~+150
Unit
V
V
V
A
A
W
°C
CONTROL (PROTECTION) PART
Symbol
V D
V DB
V IN
V FO
I FO
V SC
Parameter
Control supply voltage
Control supply voltage
Input voltage
Fault output supply voltage
Fault output current
Current sensing input voltage
Condition
Applied between V P1 -V PC , V N1 -V NC
Applied between V UFB -V UFS , V VFB -V VFS , V WFB -V WFS
Applied between U P , V P , W P -V PC , U N , V N , W N -V NC
Applied between F O -V NC
Sink current at F O terminal
Applied between CIN-V NC
Ratings
20
20
-0.5~V D +0.5
-0.5~V D +0.5
1
-0.5~V D +0.5
Unit
V
V
V
V
mA
V
TOTAL SYSTEM
Symbol
V CC(PROT)
T C
T stg
V iso
Parameter
Self protection supply voltage limit
(Short circuit protection capability)
Module case operation temperature
Storage temperature
Isolation voltage
Condition
V D = 13.5~16.5V, Inverter Part
T j = 125°C, non-repetitive, less than 2 μ s
(Note 1)
60Hz, Sinusoidal, AC 1minute, between connected all
pins and heat-sink plate
Ratings
400
-20~+100
-40~+125
2500
Unit
V
°C
°C
V rms
Note 1: Tc measurement point is described in Fig.1.
THERMAL RESISTANCE
Symbol
R th(j-c)Q
R th(j-c)F
Parameter
Junction to case thermal
resistance (Note 2)
Condition
Inverter IGBT part (per 1/6 module)
Inverter FWDi part (per 1/6 module)
Min.
-
-
Limits
Typ.
-
-
Max.
0.88
1.78
Unit
°C/W
°C/W
Note 2: Grease with good thermal conductivity and long-term endurance should be applied evenly with about +100 μ m~+200 μ m on the contacting surface
of DIPIPM and heat-sink. The contacting thermal resistance between DIPIPM case and heat sink Rth(c-f) is determined by the thickness and the
thermal conductivity of the applied grease. For reference, Rth(c-f) is about 0.2°C/W (per 1/6 module, grease thickness: 20 μ m, thermal
conductivity: 1.0W/m?k).
1
March 2011
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